FS150R17PE4
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Specification
Product | IGBT Silicon Modules |
Collector - Emitter maximum voltage VCEO | 1700 V |
Collector - emitter saturation voltage | 1.95 V |
Continuous collector current at 25 ° C | 150 A |
Gate-emitter leakage current | 100 nA |
Pd - Power Dissipation | 835 W |
Package / case | EconoPACK |
The maximum working temperature | + 125 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 6 |
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