IDDD10G65C6XTMA1
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Specification
Vr - 反向电压 | 650V |
Ifsm - 正向浪涌电流 | 55A |
安装方式 | 贴片 |
工作温度范围 | -55℃~+175℃ |
Pd-功率耗散 | 105W |
材质 | 碳化硅 |
Vf - 正向电压 | 1.25V |
最大工作温度 | +175℃ |
封装 | PG-HDSOP-10-1 |
If-正向电流 | 29A |
反向恢复时间trr | 0nS |
最小工作温度 | -55℃ |
结电容Cj | 495pF |
反向漏电流Ir | 33uA |
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IDDD10G65C6XTMA1
Infineon
二极管 碳化硅肖特基 650V 29A(DC) 表面贴装型 PG-HDSOP-10-1
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