IDH20G65C6XKSA1
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Specification
RoHS | yes |
Product | Schottky Silicon Carbide Diodes |
Installation style | Through Hole |
Package / case | TO-220-3 |
If - Forward current | 41 A |
Vrrm - repeat the reverse voltage | 650 V |
Vf - forward voltage | 1.25 V |
Ifsm - Forward Surge Current | 99 A |
Configuration | Single |
Technology | SiC |
Ir - Reverse current | 2 uA |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Pd - Power Dissipation | 108 W |
Factory packing quantity | 500 |
Unit weight | 1.800 g |
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