IDW12G65C5FKSA1
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Specification
RoHS | yes |
Product | Schottky Silicon Carbide Diodes |
Installation style | Through Hole |
Package / case | TO-247-3 |
If - Forward current | 12 A |
Vrrm - repeat the reverse voltage | 650 V |
Vf - forward voltage | 1.8 V |
Ifsm - Forward Surge Current | 71 A |
Configuration | Single |
Technology | SiC |
Ir - Reverse current | 2.4 uA |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Qualifications | AEC-Q100 |
Range of working temperature | - 55 C to + 175 C |
Pd - Power Dissipation | 76 W |
Factory packing quantity | 240 |
Unit weight | 38 g |
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DIODE SCHOTTKY 650V 12A TO247-3
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