IFCM30U65GDXKMA1
In stock
- IFCM30U65GDXKMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | 3-Phase |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.75 V |
Continuous collector current at 25 ° C | 30 A |
Gate-emitter leakage current | 1 mA |
Pd - Power Dissipation | 60.4 W |
Package / case | MDIP-24 |
The maximum working temperature | + 100 C |
Gate / emitter maximum voltage | - |
Minimum working temperature | - 40 C |
Installation style | Through Hole |
Series | CIPOS Mini |
Factory packing quantity | 280 |
Technology | Si |
Others include "IFCM30U65GDXKMA1" parts
The following parts include 'IFCM30U65GDXKMA1'
IFCM30U65GDXKMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IFCM30U65GDXKMA1
Infineon
IPM IGBT 650V 80A 24-Pin MDIP Tube
Learn More >
-
- View All Newest Products from Omron