IGB20N65S5ATMA1
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Specification
封装 | TO-263-3 |
安装方式 | SMD/SMT |
Pd-功率耗散 | 125 W |
集电极电流Ic | 40 A |
工作温度范围 | - 40 C~+ 175 C |
栅极阈值电压-VGE(th) | 20 V |
栅极/发射极最大电压 | 20 V |
集电极—发射极最大电压 VCEO | 650 V |
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