IGB30N60H3
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-263-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.95 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 60 A |
Pd - Power Dissipation | 187 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | HighSpeed 3 |
Gate-emitter leakage current | 100 nA |
Unit weight | 2.200 g |
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