IGB50N60T
In stock
- IGB50N60T Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Package / case | TO-263-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.5 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 90 A |
Pd - Power Dissipation | 333 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | TRENCHSTOP |
Gate-emitter leakage current | 100 nA |
Height | 4.4 mm |
Length | 10.25 mm |
Factory packing quantity | 1000 |
Width | 9.9 mm |
Unit weight | 2 g |
Others include "IGB50N60T" parts
The following parts include 'IGB50N60T'
IGB50N60T Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IGB50N60TATMA1
Infineon
IGBT Trench 600V 100A 333W Surface Mount PG-TO263-3-2
Learn More >
-
-
-
IGB50N60TATMA1
Infineon
Trans IGBT Chip N-CH 600V 90A 333W 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IGB50N60TATMA1
Infineon
Trans IGBT Chip N-CH 600V 90A 333W 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron