IGD01N120H2BUMA1
Manufacturer:
Mfr. Part #:
IGD01N120H2BUMA1
Allchips #:
R001-IGD01N120H2BUMA1-1-H-2301-X-N
Description:
Trans IGBT Chip N-CH 1200V 3.2A 28W 3-Pin(2+Tab) DPAK T/R
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Specification
Vds-漏源极击穿电压 | 1200V |
Pd-功率耗散 | 28W |
封装 | TO-252-3 |
Vgs - 栅极-源极电压 | 13ns/370ns |
工作温度范围 | -40°C~150°C(TJ) |
晶体管极性 | ,晶体管-UGBT,MOSFET-单 |
安装方式 | 表面贴装型 |
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