IGW30N65L5XKSA1
Manufacturer:
Mfr. Part #:
IGW30N65L5XKSA1
Allchips #:
R001-IGW30N65L5XKSA1-1-H-2311-X-N
Description:
Trans IGBT Chip N-CH 650V 85A 227W 3-Pin(3+Tab) TO-247 Tube
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.05 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 85 A |
Pd - Power Dissipation | 227 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | TRENCHSTOP 5 L5 |
Gate-emitter leakage current | 100 nA |
Factory packing quantity | 240 |
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