IHW20N65R5XKSA1
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Specification
安装方式 | 通孔 |
工作温度范围 | -40°C~175°C(TJ) |
Pd-功率耗散 | 150W |
封装 | PG-TO247-3 |
晶体管极性 | 分立半导体产品,晶体管-UGBT,MOSFET-单 |
Vgs - 栅极-源极电压 | 24ns/250ns |
Vds-漏源极击穿电压 | 650V |
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