IKD03N60RFATMA1
Manufacturer:
Mfr. Part #:
IKD03N60RFATMA1
Allchips #:
R001-IKD03N60RFATMA1-1-H-2221-X-N
Description:
Trans IGBT Chip N-CH 600V 5A 53.6W 3-Pin(2+Tab) DPAK T/R
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-252-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2.2 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 5 A |
Pd - Power Dissipation | 53.6 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | RC |
Gate-emitter leakage current | 100 nA |
Height | 2.41 mm |
Length | 6.73 mm |
Factory packing quantity | 2500 |
Width | 6.22 mm |
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