IKD04N60RFATMA1
In stock
- IKD04N60RFATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Package / case | TO-252-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2.2 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 8 A |
Pd - Power Dissipation | 75 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | RC |
Gate-emitter leakage current | 100 nA |
Height | 2.41 mm |
Length | 6.73 mm |
Factory packing quantity | 2500 |
Technology | Si |
Width | 6.22 mm |
Others include "IKD04N60RFATMA1" parts
The following parts include 'IKD04N60RFATMA1'
IKD04N60RFATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IKD04N60RFATMA1
Infineon
IGBT TRENCH 600V 8A TO252-3
Learn More >
-
- View All Newest Products from Omron