IKQ50N120CH3XKSA1
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Specification
栅极/发射极最大电压 | 20 V |
安装方式 | Through Hole |
封装 | TO-247-3 |
Pd-功率耗散 | 652 W |
栅极阈值电压-VGE(th) | 20 V |
集电极电流Ic | 100 A |
工作温度范围 | - 40 C~+ 175 C |
集电极—发射极最大电压 VCEO | 1200 V |
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IKQ50N120CH3XKSA1
Infineon
IGBT 1200V 100A 652W 通孔 PG-TO247-3-46
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