IKW25N120H3XK
Manufacturer:
Mfr. Part #:
IKW25N120H3XK
Allchips #:
R001-IKW25N120H3XK-1-H-0000-X-Y
Description:
IGBT 晶体管 IGBT PRODUCTS
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 2.05 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 50 A |
Pd - Power Dissipation | 326 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | HighSpeed 3 |
Gate-emitter leakage current | 600 nA |
Factory packing quantity | 240 |
Unit weight | 6 g |
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