IPA50R500CE
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220FP-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Id - continuous drain current | 7.6 A |
Rds On - Drain-Source On-Resistance | 500 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 18.7 nC |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Height | 16.15 mm |
Length | 10.65 mm |
Pd - Power Dissipation | 28 W |
Series | CoolMOS CE |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Width | 4.85 mm |
Unit weight | 6 g |
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