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IPA60R460CEXKSA1
Manufacturer:
Mfr. Part #:
IPA60R460CEXKSA1
Allchips #:
R001-IPA60R460CEXKSA1-1-H-0000-X-Y
Description:
N沟道,600V,9.1A,460mΩ@10V
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-220FP-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - continuous drain current | 9.1 A |
| Rds On - Drain-Source On-Resistance | 460 mOhms |
| Vgs th - gate-source threshold voltage | 2.5 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 28 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Fall time | 10 ns |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Pd - Power Dissipation | 30 W |
| Rise Time | 9 ns |
| Series | CoolMOS CE |
| Factory packing quantity | 500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 70 ns |
| Typical turn-on delay time | 11 ns |
| Width | 4.85 mm |
| Unit weight | 2.300 g |
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