IPA80R1K4P7XKSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220FP-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 800 V |
Id - continuous drain current | 4 A |
Rds On - Drain-Source On-Resistance | 1.4 Ohms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 10 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 20 ns |
Height | 16.15 mm |
Length | 10.65 mm |
Pd - Power Dissipation | 24 W |
Rise Time | 8 ns |
Series | CoolMOS P7 |
Factory packing quantity | 500 |
Typical shutdown delay time | 40 ns |
Typical turn-on delay time | 10 ns |
Width | 4.85 mm |
Unit weight | 2 g |
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