IPB019N08N3GATMA1
Manufacturer:
Mfr. Part #:
IPB019N08N3GATMA1
Allchips #:
R001-IPB019N08N3GATMA1-1-H-2239-X-N
Description:
Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R
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Specification
| Rds On-漏源导通电阻 | 1.6 mOhms |
| Id-连续漏极电流 | 180 A |
| Vgs - 栅极-源极电压 | 20 V |
| 电路数量 | 1 Channel |
| 工作温度范围 | - 55 C~+ 175 C |
| Pd-功率耗散 | 300 W |
| 安装方式 | SMD/SMT |
| Vds-漏源极击穿电压 | 80 V |
| 封装 | TO-263-7 |
| Qg-栅极电荷 | 206 nC |
| 高度 | 4.4 mm |
| 长度 | 10 mm |
| 宽度 | 9.25 mm |
| 晶体管极性 | MOSFET |
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