IPB020N08N5ATMA1
In stock
- IPB020N08N5ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Id - continuous drain current | 120 A |
Rds On - Drain-Source On-Resistance | 2.5 mOhms |
Vgs th - gate-source threshold voltage | 2.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 133 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 20 ns |
Forward transconductance - minimum | 100 S |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 300 W |
Rise Time | 16 ns |
Series | OptiMOS 5 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 62 ns |
Typical turn-on delay time | 28 ns |
Width | 9.25 mm |
Unit weight | 4 g |
Others include "IPB020N08N5ATMA1" parts
The following parts include 'IPB020N08N5ATMA1'
IPB020N08N5ATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPB020N08N5ATMA1
Analog Devices Inc
Learn More >
-
-
-
IPB020N08N5ATMA1
Infineon
Trans MOSFET N-CH 80V 173A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB020N08N5ATMA1
Infineon
表面贴装型 N 通道 80V 120A(Tc) 300W(Tc) D²PAK(TO-263AB)
Learn More >
-
- View All Newest Products from Omron