IPB020NE7N3GATMA1
In stock
- IPB020NE7N3GATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
封装 | TO-263-3 |
工作温度范围 | -55°C~175°C(TJ) |
Vds-漏源极击穿电压 | 75V |
安装方式 | 表面贴装型 |
Pd-功率耗散 | 300W(Tc) |
Others include "IPB020NE7N3GATMA1" parts
The following parts include 'IPB020NE7N3GATMA1'
IPB020NE7N3GATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPB020NE7N3GATMA1
Analog Devices Inc
Learn More >
-
-
-
IPB020NE7N3GATMA1
Infineon
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB020NE7N3GATMA1
Infineon
表面贴装型 N 通道 75V 120A(Tc) 300W(Tc) D²PAK(TO-263AB)
Learn More >
-
-
-
IPB020NE7N3GATMA1
Infineon
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB020NE7N3GATMA1
Infineon
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron