IPB025N08N3GATMA1
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Specification
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
封装 | TO-263-3 |
工作温度范围 | -55°C~175°C(TJ) |
Vds-漏源极击穿电压 | 80V |
安装方式 | 表面贴装型 |
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IPB025N08N3GATMA1 Releted Information
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表面贴装型 N 通道 80V 120A(Tc) 300W(Tc) D²PAK(TO-263AB)
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