IPB027N10N3 G
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Specification
封装 | TO-263-3 |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 100 V |
Id-连续漏极电流 | 120 A |
Rds On-漏源导通电阻 | 2.3 mOhms |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 300 W |
电路数量 | 1 Channel |
Qg-栅极电荷 | 206 nC |
工作温度范围 | - 55 C~+ 175 C |
安装方式 | SMD/SMT |
长度 | 10 mm |
宽度 | 9.25 mm |
高度 | 4.4 mm |
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