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IPB033N10N5LFATMA1
Manufacturer:
Mfr. Part #:
IPB033N10N5LFATMA1
Allchips #:
R001-IPB033N10N5LFATMA1-1-H-0000-X-N
Description:
表面贴装型 N 通道 100V 120A（Tc） 179W（Tc）
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | D2PAK-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - continuous drain current | 120 A |
| Rds On - Drain-Source On-Resistance | 2.7 mOhms |
| Vgs th - gate-source threshold voltage | 2.5 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 102 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 48 ns |
| Forward transconductance - minimum | 23 S |
| Pd - Power Dissipation | 179 W |
| Rise Time | 32 ns |
| Series | OptiMOS 5 |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 64 ns |
| Typical turn-on delay time | 8 ns |
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表面贴装型 N 通道 100V 120A（Tc） 179W（Tc）
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