IPB042N10N3G
In stock
- IPB042N10N3G Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Vgs - 栅极-源极电压 | 3.5V @ 150uA |
封装 | TO-263-2 |
Pd-功率耗散 | 214W |
Rds On-漏源导通电阻 | 4.2mΩ @ 100A,10V |
Vds-漏源极击穿电压 | 100V |
Id-连续漏极电流 | 137A |
晶体管极性 | N沟道 |
Others include "IPB042N10N3G" parts
The following parts include 'IPB042N10N3G'
- ipd60r180p7atma1
- ipd95r2k0p7atma1
- ipd50r650ce
- ipd90p04p4l04atma1
- ipa60r280cfd7xksa
- ipd031n03lgbtma
- ipb65r110cfda - sp00089640
- ips2550de1
- ipd088n06n3gbtma
- ipw65r125c7xksa
- ipb100n04s204atma
- ipl60r180p6auma1
- ipt60r150g7xtma1
- ipp60r180p7xksa1
- ip82c54-10
- ipd50n06s4l-12
- ipusbm-2ast
- ipc-j-std-001 kits
- ipa60r280p7xksa
- ipb60r190p6atma
IPB042N10N3G Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPB042N10N3G
Infineon
Learn More >
-
-
-
IPB042N10N3G
Infineon
Learn More >
-
-
-
IPB042N10N3 G
Infineon
Trans MOSFET N-CH 100V 137A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB042N10N3G
Infineon
Learn More >
-
-
-
IPB042N10N3 G
Infineon
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
Learn More >
-
-
-
IPB042N10N3G
Infineon
Learn More >
-
-
-
IPB042N10N3 G
Infineon
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
Learn More >
-
-
-
IPB042N10N3 G
Infineon
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
Learn More >
-
-
-
IPB042N10N3G
Infineon
Learn More >
-
-
-
IPB042N10N3G
Infineon
Learn More >
-
-
-
IPB042N10N3 G
Infineon
Trans MOSFET N-CH 100V 137A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron