IPB048N15N5LFATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Id - continuous drain current | 120 A |
Rds On - Drain-Source On-Resistance | 3.9 mOhms |
Vgs th - gate-source threshold voltage | 3.3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 84 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 10 ns |
Forward transconductance - minimum | 17 S |
Pd - Power Dissipation | 313 W |
Rise Time | 48 ns |
Series | OptiMOS 5 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 42 ns |
Typical turn-on delay time | 8 ns |
Unit weight | 2.200 g |
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