IPB072N15N3G
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Specification
Vds-漏源极击穿电压 | 150V |
Pd-功率耗散 | 300W(Tc) |
Vgs - 栅极-源极电压 | 4V @ 270uA |
Id-连续漏极电流 | 100A(Tc) |
晶体管极性 | N沟道 |
Rds On-漏源导通电阻 | 7.2mΩ @ 100A,10V |
封装 | PG-TO263-3 |
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