IPB081N06L3GATMA1
Manufacturer:
Mfr. Part #:
IPB081N06L3GATMA1
Allchips #:
R001-IPB081N06L3GATMA1-1-H-2336-X-N
Description:
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
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Specification
Pd-功率耗散 | 79 W |
Id-连续漏极电流 | 50 A |
Qg-栅极电荷 | 29 nC |
高度 | 4.4 mm |
Rds On-漏源导通电阻 | 6.7 mOhms |
工作温度范围 | - 55 C~+ 175 C |
封装 | TO-263-3 |
长度 | 10 mm |
宽度 | 9.25 mm |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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