IPB107N20N3GATMA1
In stock
- IPB107N20N3GATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
封装 | PG-TO-263-3 |
宽度 | 9.25 mm |
Vds-漏源极击穿电压 | 200 V |
工作温度范围 | - 55 C~+ 175 C |
Rds On-漏源导通电阻 | 10.7 mOhms |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 10 V |
长度 | 10 mm |
Id-连续漏极电流 | 88 A |
Qg-栅极电荷 | 65 nC |
高度 | 4.4 mm |
Pd-功率耗散 | 300 W |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Others include "IPB107N20N3GATMA1" parts
The following parts include 'IPB107N20N3GATMA1'
IPB107N20N3GATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPB107N20N3GATMA1
Analog Devices Inc
Learn More >
-
-
-
IPB107N20N3GATMA1
Infineon
Learn More >
-
-
-
IPB107N20N3GATMA1
Infineon
Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB107N20N3GATMA1
Infineon
Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB107N20N3GATMA1
Infineon
表面贴装型 N 通道 200V 88A(Tc) 300W(Tc) D²PAK(TO-263AB)
Learn More >
-
- View All Newest Products from Omron