IPB120N04S402ATMA1
In stock
- IPB120N04S402ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 120 A |
Rds On - Drain-Source On-Resistance | 1.58 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 134 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 30 ns |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 158 W |
Rise Time | 16 ns |
Series | XPB120N04 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 30 ns |
Typical turn-on delay time | 27 ns |
Width | 9.25 mm |
Unit weight | 4 g |
IPB120N04S402ATMA1 Documents
Download datasheets and manufacturer documentation for IPB120N04S402ATMA1
Datasheets
Others include "IPB120N04S402ATMA1" parts
The following parts include 'IPB120N04S402ATMA1'
IPB120N04S402ATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPB120N04S402ATMA1
Infineon
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB120N04S402ATMA1
Infineon
表面贴装型 N 通道 40V 120A(Tc) 158W(Tc) D²PAK(TO-263AB)
Learn More >
-
-
-
IPB120N04S402ATMA1
Infineon
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IPB120N04S402ATMA1
Infineon
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron