IPB120P04P4-04
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 40 V |
Id - continuous drain current | - 120 A |
Rds On - Drain-Source On-Resistance | 3.5 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 158 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Fall time | 52 ns |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 136 W |
Rise Time | 20 ns |
Series | OptiMOS-P2 |
Factory packing quantity | 1000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 49 ns |
Typical turn-on delay time | 30 ns |
Width | 9.25 mm |
Unit weight | 4 g |
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