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IPB180N03S4LH0ATMA1
Manufacturer:
Mfr. Part #:
IPB180N03S4LH0ATMA1
Allchips #:
R001-IPB180N03S4LH0ATMA1-1-H-2001-X-N
Description:
Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-263-7 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - continuous drain current | 180 A |
| Rds On - Drain-Source On-Resistance | 1.1 mOhms |
| Vgs th - gate-source threshold voltage | 2 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 176 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 41 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 188 W |
| Rise Time | 24 ns |
| Series | XPB180N03 |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 38 ns |
| Typical turn-on delay time | 35 ns |
| Width | 9.25 mm |
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