IPB180N06S4H1ATMA2
In stock
- IPB180N06S4H1ATMA2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Package / case | TO-263-7 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 180 A |
Rds On - Drain-Source On-Resistance | 1.7 mOhms |
Configuration | Single |
Qualifications | AEC-Q100 |
Height | 4.4 mm |
Length | 10 mm |
Series | IPB180N06 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Width | 9.25 mm |
Unit weight | 1.600 g |
Others include "IPB180N06S4H1ATMA2" parts
The following parts include 'IPB180N06S4H1ATMA2'
IPB180N06S4H1ATMA2 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPB180N06S4H1ATMA2
Analog Devices Inc
Learn More >
-
-
-
IPB180N06S4H1ATMA2
Infineon
Trans MOSFET N-CH 60V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R
Learn More >
-
-
-
IPB180N06S4H1ATMA2
Infineon
N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
Learn More >
-
- View All Newest Products from Omron