IPB407N30NATMA1
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Specification
Technology | Si |
Package / case | TO-263-3 |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 300 V |
Height | 4.4 mm |
Length | 10 mm |
Factory packing quantity | 1000 |
Width | 9.25 mm |
Unit weight | 4 g |
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