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IPB50R199CPATMA1
Manufacturer:
Mfr. Part #:
IPB50R199CPATMA1
Allchips #:
R001-IPB50R199CPATMA1-1-H-0000-X-Y
Description:
MOSFET N-CH 550V 17A TO-263
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-263-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Id - continuous drain current | 17 A |
| Rds On - Drain-Source On-Resistance | 180 mOhms |
| Vgs - gate-source voltage | 20 V |
| Vgs th - gate-source threshold voltage | 2.5 V |
| Qg - gate charge | 45 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Channel mode | Enhancement |
| Configuration | 1 N-Channel |
| Fall time | 10 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 139 W |
| Rise Time | 14 ns |
| Series | CoolMOS CE |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 80 ns |
| Typical turn-on delay time | 35 ns |
| Width | 9.25 mm |
| Unit weight | 4 g |
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