IPB50R199CPATMA1
Manufacturer:
Mfr. Part #:
IPB50R199CPATMA1
Allchips #:
R001-IPB50R199CPATMA1-1-H-0000-X-Y
Description:
MOSFET N-CH 550V 17A TO-263
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Id - continuous drain current | 17 A |
Rds On - Drain-Source On-Resistance | 180 mOhms |
Vgs - gate-source voltage | 20 V |
Vgs th - gate-source threshold voltage | 2.5 V |
Qg - gate charge | 45 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Channel mode | Enhancement |
Configuration | 1 N-Channel |
Fall time | 10 ns |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 139 W |
Rise Time | 14 ns |
Series | CoolMOS CE |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 80 ns |
Typical turn-on delay time | 35 ns |
Width | 9.25 mm |
Unit weight | 4 g |
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