IPB60R099P7ATMA1
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Specification
封装 | TO-263-3 |
Rds On-漏源导通电阻 | 77 mOhms |
Vgs - 栅极-源极电压 | 20 V |
Qg-栅极电荷 | 45 nC |
Vds-漏源极击穿电压 | 600 V |
安装方式 | SMD/SMT |
Pd-功率耗散 | 117 W |
电路数量 | 1 Channel |
Id-连续漏极电流 | 31 A |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
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Analog Devices Inc
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IPB60R099P7ATMA1
Infineon
表面贴装型 N 通道 650V 31A(Tc) 117W(Tc) D²PAK(TO-263AB)
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IPB60R099P7ATMA1
Infineon
表面贴装型 N 通道 650V 31A(Tc) 117W(Tc) D²PAK(TO-263AB)
Learn More >
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