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IPB60R299CPAATMA1
Manufacturer:
Mfr. Part #:
IPB60R299CPAATMA1
Allchips #:
R001-IPB60R299CPAATMA1-1-H-2315-X-N
Description:
Trans MOSFET N-CH 600V 11A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-263-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - continuous drain current | 11 A |
| Rds On - Drain-Source On-Resistance | 270 mOhms |
| Vgs th - gate-source threshold voltage | 2.5 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 29 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Fall time | 5 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 96 W |
| Rise Time | 5 ns |
| Series | CoolMOS CPA |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 40 ns |
| Typical turn-on delay time | 10 ns |
| Width | 9.25 mm |
| Unit weight | 4 g |
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表面贴装型 N 通道 600V 11A（Tc） 96W（Tc） PG-TO263-3
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