IPB65R045C7ATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 46 A |
Rds On - Drain-Source On-Resistance | 40 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 93 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 7 ns |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 227 W |
Rise Time | 14 ns |
Series | CoolMOS C7 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 82 ns |
Typical turn-on delay time | 20 ns |
Width | 9.25 mm |
Unit weight | 2 g |
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IPB65R045C7ATMA2
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表面贴装型 N 通道 650V 46A(Tc) 227W(Tc) PG-TO263-3
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