IPB65R225C7ATMA2
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Specification
工作温度范围 | -55°C~150°C(TJ) |
封装 | TO-263-3 |
Pd-功率耗散 | 63W(Tc) |
安装方式 | 表面贴装 |
Vds-漏源极击穿电压 | 650V |
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IPB65R225C7ATMA2
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MOSFET N-CH 650V 11A TO-263-3
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