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IPB65R310CFDAATMA1
Manufacturer:
Mfr. Part #:
IPB65R310CFDAATMA1
Allchips #:
R001-IPB65R310CFDAATMA1-1-H-2418-X-N
Description:
Trans MOSFET N-CH 650V 11.4A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-263-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - continuous drain current | 11.4 A |
| Rds On - Drain-Source On-Resistance | 280 mOhms |
| Vgs th - gate-source threshold voltage | 3.5 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 41 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 7 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 104.2 W |
| Rise Time | 7.5 ns |
| Series | CoolMOS CFDA |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 45 ns |
| Typical turn-on delay time | 11 ns |
| Width | 9.25 mm |
| Unit weight | 2 g |
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