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IPD088N06N3 G

Name: IPD088N06N3 G
Brand: Infineon
SKU: R001-IPD088N06N3 G-1-H-2224-X-Y
Availability: InStock
Rating: 5 (2 reviews)

Manufacturer:

Infineon

Mfr. Part #:

IPD088N06N3 G

Allchips #:

R001-IPD088N06N3 G-1-H-2224-X-Y

Description:

N沟道 60V 50A IPD088N06N3G

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IPD088N06N3 G Details
Packing And Shipping
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Quality Control

Infineon,IPD088N06N3 G is available at Allchips.100% original and new guarantee. If comprehensive data for IPD088N06N3 G to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS	yes
Technology	Si
Package / case	TO-252-3
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - continuous drain current	50 A
Rds On - Drain-Source On-Resistance	8.8 mOhms
Vgs - gate-source voltage	20 V
Minimum working temperature	- 55 C
The maximum working temperature	+ 175 C
Configuration	Single
Channel mode	Enhancement
Fall time	5 ns
Height	2.3 mm
Length	6.5 mm
Pd - Power Dissipation	71 W
Rise Time	40 ns
Series	OptiMOS 3
Factory packing quantity	2500
Transistor type	1 N-Channel
Typical shutdown delay time	20 ns
Typical turn-on delay time	15 ns
Width	6.22 mm
Unit weight	4 g

	Ship Fee	Lead Time	Processing Time
DHL	$20.00-$40.00(0.50KG)	2-5 days	Shipping fee depend on different zone and country
UPS	$20.00-$45.00(0.50KG)	2-5 days
TNT	$25.00-$65.00(0.50KG)	2-5 days
EMS	$25.00-$45.00(0.50KG)	4-15 days
Air, Sea/air and Sea	$2.00-$3.00(0.10KG)	7-30 days
FedEX	$20.00-$40.00(0.50KG)	3-7 days