IPD100N06S4-03
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Specification
晶体管极性 | N沟道 |
Vgs - 栅极-源极电压 | 4V @ 90uA |
封装 | PG-TO252-3 |
Pd-功率耗散 | 150W(Tc) |
Id-连续漏极电流 | 100A(Tc) |
Rds On-漏源导通电阻 | 3.5mΩ @ 100A,10V |
Vds-漏源极击穿电压 | 60V |
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