IPD122N10N3GATMA1
In stock
- IPD122N10N3GATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 59 A |
Rds On - Drain-Source On-Resistance | 10.5 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 35 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 5 ns |
Forward transconductance - minimum | 29 S |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 94 W |
Rise Time | 8 ns |
Series | OptiMOS 3 |
Factory packing quantity | 2500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 24 ns |
Typical turn-on delay time | 14 ns |
Width | 6.22 mm |
Unit weight | 340 mg |
Others include "IPD122N10N3GATMA1" parts
The following parts include 'IPD122N10N3GATMA1'
IPD122N10N3GATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPD122N10N3GATMA1
Infineon
表面贴装型 N 通道 100V 59A(Tc) 94W(Tc) PG-TO252-3
Learn More >
-
-
-
IPD122N10N3GATMA1
Infineon
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD122N10N3GATMA1
Infineon
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD122N10N3GATMA1
Infineon
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
- View All Newest Products from Omron