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IPD15N06S2L64ATMA2
Manufacturer:
Mfr. Part #:
IPD15N06S2L64ATMA2
Allchips #:
R001-IPD15N06S2L64ATMA2-1-H-0000-X-N
Description:
表面贴装型 N 通道 55V 19A（Tc） 47W（Tc） PG-TO252-3-11
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-252-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - continuous drain current | 19 A |
| Rds On - Drain-Source On-Resistance | 47 mOhms |
| Vgs th - gate-source threshold voltage | 1.2 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 13 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Fall time | 12 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Pd - Power Dissipation | 47 W |
| Rise Time | 14 ns |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 21 ns |
| Typical turn-on delay time | 4 ns |
| Width | 6.22 mm |
| Unit weight | 4 g |
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表面贴装型 N 通道 55V 19A（Tc） 47W（Tc） PG-TO252-3-11
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