IPD35N10S3L-26
Manufacturer:
Mfr. Part #:
IPD35N10S3L-26
Allchips #:
R001-IPD35N10S3L-26-1-H-22+-X-Y
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Infineon,IPD35N10S3L-26 is available at Allchips.100% original and new guarantee. If
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Specification
工作温度范围 | - 55 C~+ 175 C |
Qg-栅极电荷 | 30 nC |
高度 | 2.3 mm |
电路数量 | 1 Channel |
长度 | 6.5 mm |
宽度 | 6.22 mm |
Pd-功率耗散 | 71 W |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 100 V |
资格等级 | AEC-Q101 |
Rds On-漏源导通电阻 | 24 mOhms |
封装 | PG-TO-252-3 |
Id-连续漏极电流 | 35 A |
Vgs - 栅极-源极电压 | 10 V |
安装方式 | SMD/SMT |
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