IPD50P03P4L11ATMA2
Manufacturer:
Mfr. Part #:
IPD50P03P4L11ATMA2
Allchips #:
R001-IPD50P03P4L11ATMA2-1-H-0000-X-N
Description:
Power MOSFET Transistor
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Specification
封装 | TO-252-3-11 |
晶体管极性 | P-Channel |
Vds-漏源极击穿电压 | 30 V |
Id-连续漏极电流 | 50 A |
Rds On-漏源导通电阻 | 13 mOhms |
Vgs - 栅极-源极电压 | - 16 V, + 5 V |
Pd-功率耗散 | 58 W |
工作温度范围 | - 55 C~+ 175 C |
资格等级 | - |
安装方式 | - |
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