IPD50P04P4-13
In stock
- IPD50P04P4-13 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 40 V |
Id - continuous drain current | - 50 A |
Rds On - Drain-Source On-Resistance | 9.2 mOhms |
Vgs th - gate-source threshold voltage | - 4 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 51 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 28 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 58 W |
Rise Time | 10 ns |
Series | OptiMOS-P2 |
Factory packing quantity | 2500 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 22 ns |
Typical turn-on delay time | 17 ns |
Width | 6.22 mm |
Unit weight | 4 g |
Others include "IPD50P04P4-13" parts
The following parts include 'IPD50P04P4-13'
- ipd088n06n3gbtma
- ipd50n06s4l-12
- ipd65r250c6xtma
- ipd90n04s4-05
- ipd50p04p4-13_/_sp00231983
- ipd90p03p4-0
- ipd65r1k4c6atma
- ipdd60r050g7xtma
- ipd1-21-
- ipd90n08s4-0
- ipd50r800ceauma
- ipdd60r050g7xtma1
- ipd048n06l3gatma1
- ipd640n06l
- ipdd60r080g7xtma
- ipd60r400ceauma1
- ipd50n04s408atma1
- ipd80r1k0ceatma1
- ipd65r380e6atma1
- ipd50n06s4l-1
IPD50P04P4-13 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPD50P04P4-13
Infineon
Learn More >
-
-
-
IPD50P04P4-13
Infineon
Learn More >
-
-
-
IPD50P04P4-13
Infineon
Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD50P04P4-13_/_SP002319830
Infineon
Learn More >
-
- View All Newest Products from Omron