IPD530N15N3GBTMA1
Manufacturer:
Mfr. Part #:
IPD530N15N3GBTMA1
Allchips #:
R001-IPD530N15N3GBTMA1-1-H-21+-X-Y
Description:
MOSFET N-CH 150V 21A TO252-3
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Specification
封装 | TO-252-3 |
工作温度范围 | -55°C~175°C(TJ) |
资格等级 | - |
晶体管类型 | N沟道 |
Vds-漏源极击穿电压 | 150V |
Id-连续漏极电流 | 21A |
Rds On-漏源导通电阻 | - |
Vgs th-栅源极阈值电压 | 150V |
Pd-功率耗散 | 68W |
安装方式 | 贴片 |
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