IPD65R380C6BTMA1
Manufacturer:
Mfr. Part #:
IPD65R380C6BTMA1
Allchips #:
R001-IPD65R380C6BTMA1-1-H-2001-X-N
Description:
Trans MOSFET N-CH 650V 10.6A 3-Pin(2+Tab) DPAK T/R
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Specification
| Vds-漏源极击穿电压 | 650V |
| Vgs - 栅极-源极电压 | 3.5V@320uA |
| 安装方式 | 表面贴装型 |
| Pd-功率耗散 | 83W(Tc) |
| 晶体管极性 | 分立半导体产品,晶体管-FET，MOSFET-单个 |
| Id-连续漏极电流 | 10.6A(Tc) |
| 封装 | PG-TO252-3 |
| 工作温度范围 | -55°C~150°C（TJ） |
| Rds On-漏源导通电阻 | 380mΩ@3.2A,10V |
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