IPD70N10S312ATMA1
In stock
- IPD70N10S312ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Vds-漏源极击穿电压 | 100V |
安装方式 | 表面贴装型 |
工作温度范围 | -55°C~175°C(TJ) |
封装 | PG-TO252-3 |
Pd-功率耗散 | 125W(Tc) |
Others include "IPD70N10S312ATMA1" parts
The following parts include 'IPD70N10S312ATMA1'
IPD70N10S312ATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPD70N10S312ATMA1
Infineon
Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD70N10S312ATMA1
Infineon
Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD70N10S312ATMA1
Infineon
Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IPD70N10S312ATMA1
Infineon
Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
- View All Newest Products from Omron